Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs

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DESCRIPTION

Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM)
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INFORMATION

NOM DE FICHIER: Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs.pdf

ISBN: 9782874630880

TAILLE DU FICHIER: 9,66 MB

DATE DE PUBLICATION: 2007-Jan-01

AUTEUR: Maryline Bawedin

Even in fully-depleted (FD) SOI MOSFETs, the floating-body potential variations may lead to strong transient effects on the current characteristics. A physics-based model, enabling the fast ...

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LIVRES CONNEXES

that entire silicon film will be fully depleted during transistor operation. The discussion in this paper shows that due to negligible floating body effects in Fully depleted SOI devices, these transistors offer significant advantages when compared to Bulk silicon transistors or Partially depleted SOI MOSFETs. The main design issue in